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Physics:AMORPHOUS-CRYSTALLINE TRANSITION OF GeSe THIN FI1MS

 

AMORPHOUS-CRYSTALLINE TRANSITION OF GeSe THIN FI1MS

M. N. Makadsi S. M. Al-Jeboori

Department of Physics -College of Science-University of Baghdad

Received 27/3/2000 Accepted 22/10/2000

ABSTRACT:

Stoichiometric GeSe has been prepared in fused silica tube.X-ray examination of the thermally evaporated thin films showed amorphous state. The onset of phase transition temperature was observed to be 505 K and the grain size increases with temperature. Isothermal kinetics showed two stages of transformation, with activation energy not far from the Ge-Se bond energy. The energy gap has also been Investigated against annealing temperature.


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