AMORPHOUS-CRYSTALLINE TRANSITION OF GeSe THIN FI1MS
M. N. Makadsi S. M. A1-Jeboori Department of Physics -College of Science-University of Baghdad
Received 27/3/2000 Accepted 22/10/2000
Stoichiometric GeSe has been prepared in fused silica tube. X-ray examination of the thermally evaporated thin films showed amorphous slate. The onset of phase transition temperature was observed to be 505 K and the grain size increases with temperature. Isothermal kinetics showed two stages of transformation, with activation energy not far from the Ge-Se bond energy. The energy gap has also been Investigated against annealing temperature.