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Physics: GLASSY PHASE OF SILICON NITRIDE (SI3N4) DEPOSIT

 

GLASSY PHASE OF SILICON NITRIDE (SI3N4)

DEPOSIT

W.S. HATAM* M.S. GHALI**, A.A. KAZZAZ***

*Senior researcher, AI Majd Company.

* General Director of Saad Company ***Physics Dept. College of Science, University of Baghdad Iraq Received 8/12/1999 Accepted 6/5/2000

ABSTRACT:

Morphological investigations of Si3 N4 deposit formed by laser chemical vapour deposition is demonstrated, using the SEM (Scanning Electron Microscope) the gain of this  deposit  was Found to  be  cubic. At  higher  substrate  temperature the film thickness  was  increased  the  grain  transfer  to  an  amorphous  type.  By further  increase in  the  substrate  temperature  the  SEM  micrographs  showed  a transition  from  film to ultrafine  powder  deposits ;  the  rate  of  ultrafine  powder deposit developed at  the expense of film thickness. Finally the powder dominates the deposit or Si3 N4 with an average particle size of 500 0A. A measurement was  also confirmed by BET (Surface Area Measurement) techniques.


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