GLASSY PHASE OF SILICON NITRIDE (SI3N4)
W.S. HATAM* M.S. GHALI**, A.A. KAZZAZ***
*Senior researcher, AI Majd Company.
* General Director of Saad Company ***Physics Dept. College of Science, University of Baghdad Iraq Received 8/12/1999 Accepted 6/5/2000
Morphological investigations of Si3 N4 deposit formed by laser chemical vapour deposition is demonstrated, using the SEM (Scanning Electron Microscope) the gain of this deposit was Found to be cubic. At higher substrate temperature the film thickness was increased the grain transfer to an amorphous type. By further increase in the substrate temperature the SEM micrographs showed a transition from film to ultrafine powder deposits ; the rate of ultrafine powder deposit developed at the expense of film thickness. Finally the powder dominates the deposit or Si3 N4 with an average particle size of 500 0A. A measurement was also confirmed by BET (Surface Area Measurement) techniques.